With the acceleration of people's pace of life, fast charging plays a very important role in the field of charging. In order to go out and carry conveniently, the miniaturization of charger is inevitable, and improving the power density of charger has become a key research topic. In this way, we need to improve the switching frequency of power devices, use new semiconductor materials and production process. For example, the use of superjunction MOS, Gan and SiC materials.

In PD fast charging, three MOSFETs are generally used, which are primary high voltage MOSFET, secondary sr-mosfet and vbus-mosfet. The application of Mapson semiconductor in PD has corresponding specific models. Compared with peers, it has excellent performance in EMI and efficiency.